VISHAY · FETs & Power MOSFETs · MPN SI1416EDH-T1-GE3
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 12nC@10V |
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | - |
| Current - Continuous Drain(Id) | 3.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Pd - Power Dissipation | 2.8W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 77mΩ@2.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
N-Channel 30V 3.9A 2.8W Surface Mount SOT-363