VISHAY · FETs & Power MOSFETs · MPN SI1416EDH-T1-BE3
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 12nC@10V |
| Current - Continuous Drain(Id) | 3.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Pd - Power Dissipation | 2.8W |
| RDS(on) | 77mΩ@2.5V |
| Number | 1 N-channel |
| Type | N-Channel |
30V 3.9A 1.4V 2.8W 77mΩ@2.5V 1 N-channel N-Channel SC-70-6 Single FETs, MOSFETs RoHS