VISHAY · FETs & Power MOSFETs · MPN SI1411DH-T1-GE3
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 6.3nC@10V |
| Drain to Source Voltage | 150V |
| Output Capacitance(Coss) | - |
| Current - Continuous Drain(Id) | 520mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 1.56W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 2.7Ω@6V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | - |
P-Channel 150V 0.52A 1.56W Surface Mount SC-70-6(SOT-363)