VISHAY · FETs & Power MOSFETs · MPN SI1411DH-T1-BE3
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| Drain to Source Voltage | 150V |
|---|---|
| Gate Charge(Qg) | 6.3nC@10V |
| Current - Continuous Drain(Id) | 520mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 810mW |
| RDS(on) | 2.7Ω@6V |
| Number | 1 P-Channel |
| Type | P-Channel |
150V 520mA 4.5V 810mW 2.7Ω@6V 1 P-Channel P-Channel SC-70-6 Single FETs, MOSFETs RoHS