VISHAY · FETs & Power MOSFETs · MPN SI1401EDH-T1-GE3
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 14.1nC@8V |
| Drain to Source Voltage | 12V |
| Output Capacitance(Coss) | - |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 2.8W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 110mΩ@1.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | - |
12V 4A 1V 2.8W 110mΩ@1.5V 1 P-Channel P-Channel SC-70-6(SOT-363) Single FETs, MOSFETs RoHS