VISHAY · FETs & Power MOSFETs · MPN SI1401EDH-T1-BE3
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| Gate Charge(Qg) | 36nC@8V |
|---|---|
| Drain to Source Voltage | 12V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 1.6W;2.8W |
| RDS(on) | 34mΩ@4.5V |
| Number | 1 P-Channel |
12V 4A 1V 34mΩ@4.5V 1 P-Channel SC-70-6 Single FETs, MOSFETs RoHS