VISHAY · FETs & Power MOSFETs · MPN SI1330EDL-T1-GE3
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| Gate Charge(Qg) | 600pC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 200mW |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 50mΩ@3V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
| Type | N-Channel |
N-Channel 60V 3A 0.2W Surface Mount SC-70-3