VISHAY SI1330EDL-T1-E3

VISHAY · FETs & Power MOSFETs · MPN SI1330EDL-T1-E3

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Specifications

Configuration-
Gate Charge(Qg)400pC@4.5V
Drain to Source Voltage60V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)250mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation310mW
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)8Ω@3V
Number1 N-channel
Input Capacitance(Ciss)-

Technical details

N-Channel 60V 0.25A 0.31W Surface Mount SC-70-3

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