VISHAY · FETs & Power MOSFETs · MPN SI1317DL-T1-GE3
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| Gate Charge(Qg) | 4.3nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 1.4A |
| Operating Temperature - | -50℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 450mV |
| Pd - Power Dissipation | 400mW |
| Reverse Transfer Capacitance (Crss@Vds) | 44pF |
| RDS(on) | 150mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 272pF |
P-Channel 20V 1.4A 0.4W Surface Mount SC-70-3