VISHAY SI1317DL-T1-BE3

VISHAY · FETs & Power MOSFETs · MPN SI1317DL-T1-BE3

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)6.5nC@4.5V
Current - Continuous Drain(Id)1.4A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))450mV
Pd - Power Dissipation400mW;500mW
Reverse Transfer Capacitance (Crss@Vds)44pF
RDS(on)150mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)272pF

Technical details

20V 1.4A 450mV 150mΩ@4.5V 1 P-Channel SC-70-3 Single FETs, MOSFETs RoHS

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