VISHAY · FETs & Power MOSFETs · MPN SI1308EDL-T1-GE3
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| Gate Charge(Qg) | 1.4nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 23pF |
| Current - Continuous Drain(Id) | 1.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 400mW |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| RDS(on) | 132mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 105pF |
| Type | N-Channel |
N-Channel 30V 1.5A 0.4W Surface Mount SOT-323