VISHAY SI1302DL-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI1302DL-T1-GE3

No reviews yet — be the first to review VISHAY SI1302DL-T1-GE3.

Specifications

Configuration-
Gate Charge(Qg)1.4nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)640mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation200mW
Reverse Transfer Capacitance (Crss@Vds)0.2pF
RDS(on)480mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)-
TypeN-Channel

Technical details

N-Channel 30V 0.64A 0.2W Surface Mount SC-70-3

Related FETs & Power MOSFETs