VISHAY SI1302DL-T1-E3

VISHAY · FETs & Power MOSFETs · MPN SI1302DL-T1-E3

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Specifications

Configuration-
Gate Charge(Qg)1.4nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)640mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation200mW
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)700mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)-

Technical details

N-Channel 30V 0.64A 0.2W Surface Mount SC-70-3

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