VISHAY · FETs & Power MOSFETs · MPN SI1079X-T1-GE3
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| Gate Charge(Qg) | 26nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 1.44A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 600mV |
| Pd - Power Dissipation | 210mW |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF |
| RDS(on) | 100mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 750pF |
30V 1.44A 600mV 210mW 100mΩ@4.5V 1 P-Channel SC-89-6 Single FETs, MOSFETs RoHS