VISHAY SI1078X-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI1078X-T1-GE3

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Specifications

Gate Charge(Qg)3nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)21pF
Current - Continuous Drain(Id)1.02A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation240mW
Reverse Transfer Capacitance (Crss@Vds)11pF
RDS(on)142mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)110pF
TypeN-Channel

Technical details

N-Channel 30V 1.02A 240mW Surface Mount SOT-563(SOT-666)

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