VISHAY SI1077X-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI1077X-T1-GE3

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Specifications

Gate Charge(Qg)12.1nC@8V
Drain to Source Voltage20V
Output Capacitance(Coss)110pF
Current - Continuous Drain(Id)1.75A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation330mW
Reverse Transfer Capacitance (Crss@Vds)101pF
RDS(on)188mΩ@1.5V
Number1 P-Channel
Input Capacitance(Ciss)965pF
TypeP-Channel

Technical details

P-Channel 20V 1.75A 0.33W Surface Mount SC-89-6

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