VISHAY · FETs & Power MOSFETs · MPN SI1070X-T1-GE3
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| Gate Charge(Qg) | 3.8nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 55pF |
| Current - Continuous Drain(Id) | 1.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.55V |
| Pd - Power Dissipation | 236mW |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| RDS(on) | 99mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 385pF |
| Type | N-Channel |
N-Channel 30V 1.2A 0.236W Surface Mount SC-89-6