VISHAY · FETs & Power MOSFETs · MPN SI1062X-T1-GE3
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| Gate Charge(Qg) | 2.7nC@8V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 14pF |
| Current - Continuous Drain(Id) | 530mA |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 220mW |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF |
| RDS(on) | 762mΩ@1.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 43pF |
| Type | N-Channel |
20V 530mA 1V 220mW 762mΩ@1.5V 1 N-channel N-Channel SC-89 Single FETs, MOSFETs RoHS