VISHAY · FETs & Power MOSFETs · MPN SI1050X-T1-GE3
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| Gate Charge(Qg) | 7.7nC@4.5V |
|---|---|
| Drain to Source Voltage | 8V |
| Current - Continuous Drain(Id) | 1.34A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Pd - Power Dissipation | 151mW |
| Reverse Transfer Capacitance (Crss@Vds) | 130pF |
| RDS(on) | 86mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 585pF |
N-Channel 8V 1.34A 0.151W Surface Mount SC-89-6