VISHAY · FETs & Power MOSFETs · MPN SI1036X-T1-GE3
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| Current - Continuous Drain(Id) | 600mA |
|---|---|
| RDS(on) | 540mΩ@4.5V |
| Pd - Power Dissipation | 140mW |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Drain to Source Voltage | 30V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 36pF |
| Gate Charge(Qg) | 720pC@4.5V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 9pF |
N-Channel Array 30V 0.6A 0.14W Surface Mount SC-89-6