VISHAY · FETs & Power MOSFETs · MPN SI1032R-T1-GE3
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| Gate Charge(Qg) | 750pC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | - |
| Current - Continuous Drain(Id) | 140mA |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 250mW |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 10Ω@1.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
| Type | N-Channel |
20V 140mA 1.2V 250mW 10Ω@1.5V 1 N-channel N-Channel SC-75A Single FETs, MOSFETs RoHS