VISHAY SI1031R-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI1031R-T1-GE3

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Specifications

Gate Charge(Qg)1.5nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)140mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation250mW
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)8Ω@4.5V
Number1 P-Channel
Input Capacitance(Ciss)-
TypeP-Channel

Technical details

P-Channel 20V 140mA 250mW Surface Mount SC-75A-3

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