VISHAY · FETs & Power MOSFETs · MPN SI1029X-T1-GE3
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| Current - Continuous Drain(Id) | 320mA |
|---|---|
| RDS(on) | 8Ω@4.5V |
| Pd - Power Dissipation | 280mW |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Drain to Source Voltage | 60V |
| Type | N-Channel + P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | - |
| Gate Charge(Qg) | - |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 10pF |
320mA 8Ω@4.5V 280mW 3V 1 N-Channel + 1 P-Channel SC-89-6 FET, MOSFET Arrays RoHS