VISHAY · FETs & Power MOSFETs · MPN SI1025X-T1-GE3
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| Current - Continuous Drain(Id) | 500mA |
|---|---|
| RDS(on) | 4Ω@10V |
| Pd - Power Dissipation | 250mW |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Drain to Source Voltage | 60V |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 23pF |
| Gate Charge(Qg) | 1.7nC@15V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 10pF |
P-Channel 60V 500mA 250mW Surface Mount SC-89-6