VISHAY · FETs & Power MOSFETs · MPN SI1024X-T1-GE3
No reviews yet — be the first to review VISHAY SI1024X-T1-GE3.
| Current - Continuous Drain(Id) | 600mA |
|---|---|
| Pd - Power Dissipation | 145mW |
| RDS(on) | 1.25Ω@1.8V |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Drain to Source Voltage | 20V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 225pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 75pF |
| Gate Charge(Qg) | 750pC@4.5V |
| Operating Temperature | -55℃~+150℃ |
N-Channel Array 20V 600mA 145mW Surface Mount SOT-563