VISHAY · FETs & Power MOSFETs · MPN SI1023X-T1-GE3
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| Gate Charge(Qg) | 1.5nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 350mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 450mV |
| Pd - Power Dissipation | 145mW |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 2.7Ω@1.8V |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | - |
| Vgs | ±6V |
| Type | P-Channel |
P-Channel 20V 350mA 145mW Surface Mount SOT-563-6