VISHAY SI1023CX-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI1023CX-T1-GE3

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Specifications

Current - Continuous Drain(Id)450mA
RDS(on)2.4Ω@1.5V
Pd - Power Dissipation180mW
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage20V
TypeP-Channel
Reverse Transfer Capacitance (Crss@Vds)10pF
Number2 P-Channel
Input Capacitance(Ciss)45pF
Gate Charge(Qg)2.5nC@4.5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)15pF

Technical details

P-Channel 20V 0.45A 0.18W Surface Mount SC-89

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