VISHAY · FETs & Power MOSFETs · MPN SI1022R-T1-GE3
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| Gate Charge(Qg) | 600pC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 6pF |
| Current - Continuous Drain(Id) | 330mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 130mW |
| Reverse Transfer Capacitance (Crss@Vds) | 2.5pF |
| RDS(on) | 1.25Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 30pF |
| Type | N-Channel |
N-Channel 60V 330mA 130mW Surface Mount SOT-523