VISHAY · FETs & Power MOSFETs · MPN SI1013X-T1-GE3
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| Gate Charge(Qg) | 1.5nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | - |
| Current - Continuous Drain(Id) | 400mA |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 275mW |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 2.7Ω@1.8V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | - |
| Type | P-Channel |
20V 400mA 275mW 2.7Ω@1.8V 1 P-Channel P-Channel SC-89 Single FETs, MOSFETs RoHS