VISHAY SI1013CX-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SI1013CX-T1-GE3

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Specifications

Gate Charge(Qg)1nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)15pF
Current - Continuous Drain(Id)450mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation190mW
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)1.5Ω@1.8V
Number1 P-Channel
Input Capacitance(Ciss)45pF
TypeP-Channel

Technical details

P-Channel 20V 0.45A 0.19W Surface Mount SC-89

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