VISHAY · FETs & Power MOSFETs · MPN SI1012X-T1-GE3
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 750pC@10V,4.5V |
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | - |
| Current - Continuous Drain(Id) | 600mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Pd - Power Dissipation | 250mW |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 1.25Ω@1.8V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
N-Channel 20V 600mA 250mW Surface Mount SC-89