VISHAY · FETs & Power MOSFETs · MPN SI1012R-T1-GE3
No reviews yet — be the first to review VISHAY SI1012R-T1-GE3.
| Gate Charge(Qg) | 750pC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 500mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Pd - Power Dissipation | 150mW |
| RDS(on) | 700mΩ@4.5V |
| Number | 1 N-channel |
| Type | N-Channel |
N-Channel 20V 500mA 150mW Surface Mount SC-75A