VISHAY ND2012L-TR1

VISHAY · FETs & Power MOSFETs · MPN ND2012L-TR1

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Specifications

Drain to Source Voltage200V
Current - Continuous Drain(Id)100mA
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation320mW

Technical details

200V 100mA 320mW Single FETs, MOSFETs RoHS

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