VISHAY IRLI640GPBF

VISHAY · FETs & Power MOSFETs · MPN IRLI640GPBF

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Specifications

Configuration-
Drain to Source Voltage200V
Gate Charge(Qg)66nC@10V
Output Capacitance(Coss)400pF
Current - Continuous Drain(Id)9.9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation40W
Reverse Transfer Capacitance (Crss@Vds)120pF
RDS(on)270mΩ@4V
Number1 N-channel
Input Capacitance(Ciss)1.8nF

Technical details

N-Channel 200V 9.9A 40W Through Hole TO-220F

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