VISHAY IRLD120PBF

VISHAY · FETs & Power MOSFETs · MPN IRLD120PBF

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Specifications

Gate Charge(Qg)12nC
Drain to Source Voltage100V
Current - Continuous Drain(Id)940mA
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation1.3W
Reverse Transfer Capacitance (Crss@Vds)30pF
RDS(on)270mΩ@5V
Number1 N-channel
Input Capacitance(Ciss)490pF

Technical details

100V 940mA 2V 1.3W 270mΩ@5V 1 N-channel HVMDIP-4 Single FETs, MOSFETs RoHS

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