VISHAY IRLD110PBF

VISHAY · FETs & Power MOSFETs · MPN IRLD110PBF

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Specifications

Configuration-
Gate Charge(Qg)6.1nC@5V
Drain to Source Voltage100V
Output Capacitance(Coss)80pF
Current - Continuous Drain(Id)1A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation1.3W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)540mΩ@5V
Number1 N-channel
Input Capacitance(Ciss)250pF

Technical details

N-Channel 100V 1A 1.3W Through Hole HVMDIP-4

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