VISHAY · FETs & Power MOSFETs · MPN IRLD110PBF
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 6.1nC@5V |
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 80pF |
| Current - Continuous Drain(Id) | 1A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 1.3W |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF |
| RDS(on) | 540mΩ@5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 250pF |
N-Channel 100V 1A 1.3W Through Hole HVMDIP-4