VISHAY IRL640PBF-BE3

VISHAY · FETs & Power MOSFETs · MPN IRL640PBF-BE3

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Specifications

Drain to Source Voltage200V
Gate Charge(Qg)66nC@5V
Current - Continuous Drain(Id)17A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)120pF
RDS(on)270mΩ@4V
Number1 N-channel
Input Capacitance(Ciss)1.8nF
TypeN-Channel

Technical details

200V 17A 2V 125W 270mΩ@4V 1 N-channel N-Channel TO-220AB Single FETs, MOSFETs RoHS

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