VISHAY IRFUC20PBF

VISHAY · FETs & Power MOSFETs · MPN IRFUC20PBF

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)18nC@10V
Output Capacitance(Coss)48pF
Current - Continuous Drain(Id)1.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation42W
Reverse Transfer Capacitance (Crss@Vds)8.6pF
RDS(on)4.4Ω@10V
Number1 N-channel
Input Capacitance(Ciss)350pF
TypeN-Channel

Technical details

N-Channel 600V 1.3A 42W Through Hole TO-251AA

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