VISHAY IRFR214TRPBF

VISHAY · FETs & Power MOSFETs · MPN IRFR214TRPBF

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Specifications

Gate Charge(Qg)8.2nC@10V
Drain to Source Voltage250V
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation2.5W;25W
Reverse Transfer Capacitance (Crss@Vds)9.6pF
RDS(on)2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)140pF

Technical details

250V 2V 2Ω@10V 1 N-channel TO-252 Single FETs, MOSFETs RoHS

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