VISHAY IRFPG50PBF

VISHAY · FETs & Power MOSFETs · MPN IRFPG50PBF

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Specifications

Gate Charge(Qg)190nC@10V
Drain to Source Voltage1kV
Output Capacitance(Coss)250pF
Current - Continuous Drain(Id)6.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation190W
Reverse Transfer Capacitance (Crss@Vds)84pF
RDS(on)2Ω@10V
Number1 N-channel
Input Capacitance(Ciss)2.8nF
TypeN-Channel

Technical details

N-Channel 1kV 6.1A 190W Through Hole TO-247AC

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