VISHAY IRFPC50LCPBF

VISHAY · FETs & Power MOSFETs · MPN IRFPC50LCPBF

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)84nC@10V
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation190W
RDS(on)600mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.3nF

Technical details

600V 11A 4V 190W 600mΩ@10V 1 N-channel TO-247AC Single FETs, MOSFETs RoHS

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