VISHAY IRFPC50APBF

VISHAY · FETs & Power MOSFETs · MPN IRFPC50APBF

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)70nC@10V
Output Capacitance(Coss)270pF
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation180W
Reverse Transfer Capacitance (Crss@Vds)9.7pF
RDS(on)580mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.1nF
TypeN-Channel

Technical details

N-Channel 600V 11A 180W Through Hole TO-247AC

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