VISHAY IRFP048PBF

VISHAY · FETs & Power MOSFETs · MPN IRFP048PBF

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)110nC@10V
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation190W
RDS(on)18mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.4nF

Technical details

60V 70A 4V 190W 18mΩ@10V 1 N-channel TO-247AC Single FETs, MOSFETs RoHS

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