VISHAY · FETs & Power MOSFETs · MPN IRFIBF30GPBF
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| Gate Charge(Qg) | 78nC@10V |
|---|---|
| Drain to Source Voltage | 900V |
| Current - Continuous Drain(Id) | 1.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 35W |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF |
| RDS(on) | 3.7Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.2nF |
900V 1.9A 2V 35W 3.7Ω@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS