VISHAY · FETs & Power MOSFETs · MPN IRFIB7N50APBF
No reviews yet — be the first to review VISHAY IRFIB7N50APBF.
| Gate Charge(Qg) | 52nC@10V |
|---|---|
| Drain to Source Voltage | 500V |
| Output Capacitance(Coss) | 2nF |
| Current - Continuous Drain(Id) | 6.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 60W |
| Reverse Transfer Capacitance (Crss@Vds) | 8.1pF |
| RDS(on) | 520mΩ@10V |
| Input Capacitance(Ciss) | 1.423nF |
| Type | N-Channel |
500V 6.6A 4V 60W 520mΩ@10V N-Channel TO-220-3 Single FETs, MOSFETs RoHS