VISHAY · FETs & Power MOSFETs · MPN IRFIB6N60APBF
No reviews yet — be the first to review VISHAY IRFIB6N60APBF.
| Gate Charge(Qg) | 49nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Current - Continuous Drain(Id) | 3.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 60W |
| Reverse Transfer Capacitance (Crss@Vds) | 7.1pF |
| RDS(on) | 750mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.4nF |
600V 3.5A 2V 60W 750mΩ@10V 1 N-channel TO-220-3 Single FETs, MOSFETs RoHS