VISHAY · FETs & Power MOSFETs · MPN IRFI640GPBF
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| Gate Charge(Qg) | 70nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 9.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 40W |
| Reverse Transfer Capacitance (Crss@Vds) | 130pF |
| RDS(on) | 180mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.3nF |
N-Channel 200V 9.8A 40W Through Hole TO-220F