VISHAY IRFD9110PBF

VISHAY · FETs & Power MOSFETs · MPN IRFD9110PBF

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Specifications

Gate Charge(Qg)8.7nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)84pF
Current - Continuous Drain(Id)490mA
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation1.3W
Reverse Transfer Capacitance (Crss@Vds)18pF
RDS(on)1.2Ω@10V
Number1 P-Channel
Input Capacitance(Ciss)200pF
TypeP-Channel

Technical details

P-Channel 100V 0.49A 1.3W Through Hole HVMDIP-4

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