VISHAY IRFD320PBF

VISHAY · FETs & Power MOSFETs · MPN IRFD320PBF

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Specifications

Gate Charge(Qg)20nC@10V
Drain to Source Voltage400V
Output Capacitance(Coss)120pF
Current - Continuous Drain(Id)490mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation1W
Reverse Transfer Capacitance (Crss@Vds)47pF
RDS(on)1.8Ω@10V
Number1 N-channel
Input Capacitance(Ciss)410pF
TypeN-Channel

Technical details

N-Channel 400V 0.49A 1W Through Hole HVMDIP-4

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