VISHAY · FETs & Power MOSFETs · MPN IRFD224PBF
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| Gate Charge(Qg) | 14nC@10V |
|---|---|
| Drain to Source Voltage | 250V |
| Current - Continuous Drain(Id) | 630mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 1W |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF |
| RDS(on) | 1.1Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 260pF |
250V 630mA 1W 1.1Ω@10V 1 N-channel HVMDIP-4 Single FETs, MOSFETs RoHS